features 1 of 4 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems fpd7612 general purpose phemt the fpd7612 is an algaas/ingaas ps eudomorphic high electron mobility transistor (phemt), featuring a 0.25 ? mx200 ? m schottky barrier gate, defined by high-resolution stepper-based photolithography. the recessed gate structure minimizes parasitics to optimize performance. the epitaxial structure and processing have been optimized for reliable high-power applications. a1 ? 20.5dbm output p 1db ? 13db power gain at 12ghz ? 17db maximum stable gain at 12ghz ? 11db maximum stable gain at 18ghz ? 45% power-added efficiency applications ? narrowband and broadband high-performance amplifiers ? satcom uplink transmitters ? pcs/cellular low-voltage high-efficiency output ampli- fiers ? medium-haul digital radio transmitters ds100601 ? package style: bare die fpd7612gen- eral purpose phemt parameter specification unit condition min. typ. max. electrical specifications p 1db gain compression 19 20.5 dbm v ds =5v, i ds =50% i dss small signal gain 11.0 13.0 db v ds =5v, i ds =50% i dss noise figure 1.2 db v ds =5v, i ds =50% i dss power-added efficiency (pae) 45 % v ds =5v, i ds =50% i dss , p out =p 1db maximum stable gain (s21/s12) 16 17 db v ds =5v, i ds =50% i dss, f=12ghz 9.5 11 db v ds =5v, i ds =50% i dss, f=24ghz saturated drain-source current (i dss )456075mav ds =1.3v, v gs =0v maximum drain-source current (i max ) 120 ma v ds =1.3v, v gs ? +1v transconductance (g m )80msv ds =1.3v, v gs =0v gate-source leakage current (i gso )110 ? av gs =-5v pinch-off voltage (v p ) |0.7| |1.0| |1.3| v v ds =1.3v, i ds =0.2ma gate-source breakdown voltage (v bdgs ) |12.0| |14.0| v i gs =0.2ma gate-drain breakdown voltage (v bdgd ) |14.5| |16.0| v i gd =0.2ma thermal resistivity ( ? jc) 280 ? c/w v ds >3v thermal resistivity ( ? jc) 20 ? c/w v ds >6v note: t ambient =22c, rf specifications measured at f=12ghz using cw signal.
2 of 4 ds100601 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd7612 pad layout note: coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. absolute maximum ratings 1 parameter rating unit drain-source voltage (v ds ) (-3v 3 of 4 ds100601 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd7612 typical measured performance noise parameters (biased at v ds =3.0v, i ds =27ma) freq n.f.min rn/50 gamma opt. ghz db ? mag. angle 2.00 0.31 0.28 0.78 9.63 3.00 0.39 0.28 0.70 18.43 4.00 0.44 0.26 0.74 28.57 5.00 0.54 0.24 0.61 35.40 6.00 0.65 0.23 0.63 44.37 7.00 0.75 0.23 0.54 51.10 8.00 0.90 0.22 0.49 58.43 9.00 1.07 0.21 0.44 68.47 10.00 1.08 0.20 0.43 73.30 11.00 1.09 0.20 0.44 80.63 12.00 1.28 0.20 0.38 92.87 13.00 1.55 0.19 0.34 104.10 14.00 1.66 0.17 0.32 111.83 15.00 1.60 0.15 0.30 120.60 16.00 1.72 0.15 0.32 124.47 17.00 1.83 0.14 0.28 144.77 18.00 1.90 0.13 0.20 158.23 associated gain and n. f.min vs frequency biased @ 5v, 27ma 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 .0 11.0 12.0 13.0 14 .0 15.0 16 .0 17 .0 18.0 frequency (ghz) associated gain (db) 0 0. 5 1 1. 5 2 2. 5 3 3. 5 n. f. mi n (d b) gain (db) n.f.min associated gain and n.f.min vs frequency biased @ 3v, 27ma 8.0 10 .0 12 .0 14 .0 16 .0 18 .0 20 .0 22 .0 2. 0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11 . 0 12 . 0 13.0 14.0 15.0 16.0 17 . 0 18 . 0 frequency (ghz) associated gain (db) 0 0. 5 1 1. 5 2 2. 5 3 3. 5 n. f.min (db ) ga i n (d b ) n.f.min
4 of 4 ds100601 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd7612 preferred assembly instructions gaas devices are fragile and should be handled with great care . specially designed collets should be used where possible. the back of the die is metallized and th e recommended mounting method is by the use of conductive epoxy. epoxy should be applied to the attachment surface uniformly and sparingly to av oid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. for automated dispense ablestick lmisr4 is recommended. for manual dis- pense ablestick 84-1 lmi or 84-1 lmit are recommended. these should be cured at a temperature of 150c for 1 hour in an oven especially set aside for epoxy curing only. if possible, the curing oven should be flushed with dry nitrogen. the gold-tin (80% au 20% sn) eutectic die attach has a melting point of approximately 280c but the absolute temperature being used depends on the leadframe material used and the particular a pplication. the maximum time should be kept to a minimum. this part has gold (au) bond pads requiring the use of gold (99.99% pure) bondwire. it is recommended that 25.4 mm diameter gold wire be used. recommended lead bond technique is thermocompression wedge bonding with 0.001? (25m) diameter wire. bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependant on the setup and application being used. ultrasonic or thermosonic bonding is not recommended. bonds should be made from the die first and then to the mounti ng substrate or package. the physical length of the bondwires should be minimized especially when making rf or ground connections. handling precautions to avoid damage to the devices, care should be exercised during handling. proper electro- static discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. esd/msl rating these devices should be treated as class 0 (0v to 250v) as defined in jedec standard no. 22-a114. further information on esd control measures can be found in mil-std-1686 and mil-hdbk-263. application notes and design data application notes and design data including s-parameters, noise parameters, and device model are available on request and from www.rfmd.com. disclaimers this product is not designed for use in any spac e-based or life-sustaining/supporting equipment. ordering information delivery quantity ordering code full pack (100) fpd7612-000 small quantity (25) FPD7612-000SQ sample quantity (3) fpd7612-000s3
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